کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1673455 1008948 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical properties of NiO films obtained by high-temperature oxidation of nickel
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Electrical properties of NiO films obtained by high-temperature oxidation of nickel
چکیده انگلیسی

Nickel oxide thin films are formed by high-temperature oxidation of nickel foils at 973 K, and are characterized using X-ray diffraction and scanning electron microscopy indicating the formation of a single NiO phase whose thickness grows following a parabolic law. The electrical properties of the formed films are examined by impedance spectroscopy at room temperature; and by measuring direct current (DC) and alternating current (AC) conductivities and dielectric properties at different temperatures. At room temperature, the conductivity is about 4 orders of magnitude higher than that of NiO single crystals. Below 200 K, DC conductivity displays a slight increase with increasing temperature indicating conduction by thermal activation hopping of small polarons. Above 250 K, large polaron conduction associated with holes in the 2p band of O2− with activation energy of about 0.4 eV is observed. Frequency as well as temperature dependencies of the AC conductivity and dielectric constant exhibit trends usually observed in carrier dominated dielectrics.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 10, 31 March 2008, Pages 3112–3116
نویسندگان
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