Silicon nano-crystalline structures fabricated by a sequential plasma hydrogenation and annealing technique

Silicon nano-crystalline structures have been prepared from amorphous silicon films on silicon substrates using direct-current plasma hydrogenation and annealing at temperatures about 450 °C. Plasma power densities about 5.5 W/cm2 were found to be suitable for the creation of nano-porous layers. The nano-porous structures produced visible luminescence at room temperature as confirmed by photoluminescence spectroscopy. The effects of plasma power and annealing temperature on the grain size and luminescence properties of these layers have been investigated by scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and photoluminescence. Lowering the temperature during the hydrogenation step led to an increase in the diameter of the grains. In addition, lowering the plasma power density caused the distribution of the porous surface structures to become less widely distributed and the formation of more packed structures resulted.