کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673776 | 1008953 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy](/preview/png/1673776.png)
چکیده انگلیسی
Film growth of hydrogenated amorphous silicon (a-Si:H) by hot-wire chemical vapor deposition was studied simultaneously and in real-time by spectroscopic ellipsometry and attenuated total reflection infrared spectroscopy. The a-Si:H films were deposited on native oxide-covered GaAs(100) and Si(100) substrates at temperatures ranging from 70 to 350 °C. A temperature dependent initial growth phase is revealed by the evolution of the surface roughness and the surface and bulk SiHx absorption peaks. It is discussed that the films show a distinct nucleation behavior by the formation of islands on the surface that subsequently coalesce followed by bulk a-Si:H growth. Insight into a temperature-activated smoothening mechanism and the creation of a hydrogen-rich interface layer is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 5, 15 January 2008, Pages 511-516
Journal: Thin Solid Films - Volume 516, Issue 5, 15 January 2008, Pages 511-516
نویسندگان
P.J. van den Oever, J.J.H. Gielis, M.C.M. van de Sanden, W.M.M. Kessels,