A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films

From TEM, XRD and Raman measurements, we compare the crystallization kinetics when HWCVD and PECVD a-Si:H films, containing different initial film hydrogen contents (CH), are crystallized by annealing at 600 °C. For the HWCVD films, the nucleation rate increases, and the incubation time and the full width at half maximum (FWHM) of the XRD (111) peak decrease with decreasing film CH. However, the crystallization kinetics of HWCVD and PECVD films of similar initial film CH are quite different, suggesting that other factors beside the initial film hydrogen content affect the crystallization process. Even though the bonded hydrogen evolves very early from the film during annealing, we suggest that the initial spatial distribution of hydrogen plays a critical role in the crystallization kinetics, and we propose a preliminary model to describe this process.