Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH3) and trimetylgallium (TMG) under low V/III source gas ratio (NH3/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C3H8). The AlN layer was deposited as a buffer layer using NH3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NHx radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.