Low temperature (< 100 °C) fabrication of thin film silicon solar cells by HWCVD

Tested in a p-i-n solar cell on Asahi SnO2:F coated glass (without ZnO at the back reflector), this i-layer gave an efficiency of 3.4%. To our knowledge, this is the first report of a HWCVD thin film silicon solar cell made at such a low temperature.