کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673935 | 1008954 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Three-levels conductance switching in an organic memory cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A solid-state memory based on a hindered phenol substituted bithiophene is reported, showing conductance switching behaviour between three discrete states among which it is possible to cycle repeatedly on the basis of three characteristic threshold voltages. The experimental measurements show that the addressing of the three states is independent of the programming time, that the retention time for each state is longer than 15Â h and that the devices endure current-voltage cycles well in excess of 50. Considerations based on density functional theory calculations are made to provide hints on the mechanism behind this memory effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7680-7684
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7680-7684
نویسندگان
M. Caironi, D. Natali, E. Canesi, A. Bianco, C. Bertarelli, G. Zerbi, M. Sampietro,