کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673941 | 1008954 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates](/preview/png/1673941.png)
چکیده انگلیسی
HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm2/V∙s and an on/off current ratio of ~ 1 × 103.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7715–7719
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7715–7719
نویسندگان
Dong-Won Kim, Jaewon Jang, Hyunsuk Kim, Kyoungah Cho, Sangsig Kim,