کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673969 | 1008954 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device](/preview/png/1673969.png)
چکیده انگلیسی
The reactive-ion etching of Sn-doped Ge2Sb2Te5 (GST) films with different Sn concentration in CHF3/O2 plasma was studied. By changing the gas mixture ratio and radio-frequency (RF) power under constant chamber pressure, the relatively smooth surface morphologies of etched Sn-doped GST were obtained. The characteristics of etch rate as functions of gas mixture, chamber pressure, and RF power were also investigated. Besides that, the etching selectivity of Sn-doped GST to SiO2 and photoresist was measured.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7871–7874
Journal: Thin Solid Films - Volume 516, Issue 21, 1 September 2008, Pages 7871–7874
نویسندگان
Cheng Xu, Bo Liu, Zhitang Song, Songlin Feng, Bomy Chen,