کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674096 1008957 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Light illumination effects in ambipolar FETs based on poly(3-hexylthiophene) and fullerene derivative composite films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Light illumination effects in ambipolar FETs based on poly(3-hexylthiophene) and fullerene derivative composite films
چکیده انگلیسی

The effects of light illumination on field effect transistors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric methyl ester (PCBM) composite films have been studied. It is found that the light illumination on pure P3HT and PCBM generally resulted in decrease of the threshold voltages and increase of the mobilities by a little. In the composite film at the PCBM contents of x = [P3HT] / ([P3HT] + [PCBM]) = 0.67 ∼ 0.9, an ambipolar field transport appeared. The light illumination effect was observed remarkably in the shift of threshold voltage for the hole generation at x = 0.75. Variations of Hole and electron mobilities and threshold voltage of electron generation upon light illumination were basically similar to those of the pure materials. The results were discussed in terms of the light assisted carrier generation in field effects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2607–2610
نویسندگان
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