کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674125 | 1008957 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reduction of threshold voltage fluctuation for organic field effect transistors by increase of insulator capacitance
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Fluctuation of threshold voltages for top contact organic field effect transistors with pentacene active layers were successfully reduced by increase of gate insulator capacitance. Average fluctuation of threshold voltages of devices with 1000-nm-SiO2-insulator was approximately 4Â V, however it became only 0.5Â V when the SiO2 thickness was reduced to 100Â nm. Since a vast number of transistors with constant threshold voltage are needed for application to displays, increase of capacitance would be a useful method for improving the reliability of OFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2739-2742
Journal: Thin Solid Films - Volume 516, Issue 9, 3 March 2008, Pages 2739-2742
نویسندگان
Kouji Suemori, Sei Uemura, Manabu Yoshida, Satoshi Hoshino, Takehito Kodzasa, Toshihide Kamata,