Analysis of threshold voltage shift of pentacene field effect transistor with ferroelectric gate insulator as a Maxwell–Wagner effect

The current–voltage (I–V) characteristics of pentacene filed effect transistor (FET) with ferroelectric gate insulator (P(VDF-TeFE)) is investigated to analyze the threshold voltage shift in terms of Maxwell–Wagner (MW) effect. The spontaneous polarization generated in ferroelectric gate insulator modulates the amount of accumulated charges which is injected from the source electrode, and causes threshold voltage shift. Two peaks observed in the I–V characteristics were analyzed based on a MW effect element. Results reveal that the movement of accumulated charges at the pentacene/P(VDF-TeFE) interface along the electric field in the FET, and the ferroelectric polarization of P(VDF-TeFE) are main origins of the peaks.