کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674199 1008960 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices
چکیده انگلیسی

As the industry approaches sub-100 nm technology nodes, the trend is to replace cobalt silicide with nickel monosilicide (NiSi) since the use of NiSi for contact metallization shows a number of technological advantages, including its line-width independent low resistivity, less Si consumption and low thermal budget for its formation, and compatibility with Si1 − xGex substrate technology. However, NiSi has not been considered as a serious candidate until recently mainly due to its poor morphological/thermal stability. Recent studies have shown that the morphological/thermal stability of NiSi can be enhanced substantially through the addition of a small amount of impurities, resulting in much improved silicided shallow junction integrity. Moreover, it has also been demonstrated that the addition of certain impurities, such as Ti, effectively reduces the sensitivity of NiSi formation to surface contaminants (e.g., residual interfacial oxide). This paper will present and discuss the details of these experimental results.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 22, 15 August 2007, Pages 8102–8108
نویسندگان
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