کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674230 1008960 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si
چکیده انگلیسی
Influence of substrate orientation on epitaxial growth of the ferromagnetic silicide Fe3Si on Si was investigated using low temperature (60-300 °C) molecular beam epitaxy. Transmission electron microscopy (TEM) measurements revealed that Fe3Si layers were epitaxially grown on Si(110) and Si(111), while random poly-crystal Fe3Si layers were formed on Si(100). From the Rutherford backscattering spectroscopy measurements, the values of the χmin of the Fe3Si layers grown at 60 °C on Si(100), Si(110), and Si(111) were evaluated to be 100%, 97%, and 41%, respectively. This dependence on the substrate orientation was explained on the basis of the atomic alignments at the Fe3Si/Si interfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 22, 15 August 2007, Pages 8250-8253
نویسندگان
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