کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674389 | 1008962 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaN-based semiconductor saturable absorber mirror operating around 415Â nm
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: GaN-based semiconductor saturable absorber mirror operating around 415Â nm GaN-based semiconductor saturable absorber mirror operating around 415Â nm](/preview/png/1674389.png)
چکیده انگلیسی
We report a broadband GaN-based semiconductor saturable absorber mirror (SESAM) operating around 415Â nm. The GaInN quantum wells (QWs) acting as saturable absorbers were grown by metal-organic chemical vapor deposition (MOCVD). A broadband dielectric high-reflective distributed Bragg reflector (DBR) was deposited onto the QW sample using plasma-enhanced chemical vapor deposition (PECVD) to build the SESAM. The SESAM has a stopband of over 100Â nm. The linear and nonlinear transmission/absorption from QWs and the reflectance from DBR and SESAM were studied. This SESAM can be applied in passively mode-locking blue lasers such as GaN-based semiconductor lasers for producing ultra-short optical pulses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 10, 26 March 2007, Pages 4484-4487
Journal: Thin Solid Films - Volume 515, Issue 10, 26 March 2007, Pages 4484-4487
نویسندگان
N. Xiang, F. Lin, H.P. Li, H.F. Liu, W. Liu, W. Ji, S.J. Chua,