کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674391 | 1008962 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The self-assemble GaN:Mg inverted hexagonal pyramids formatted by photoelectrochemical wet-etching process
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Small sized self-assembled inverted hexagonal pyramids consisting of GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed using photoelectrochemical wet etching. Lateral etching, bottom-up etching, and anisotropic etching are the formation mechanism of the pyramids during the etching process sequentially. The dimension of these inverted hexagonal pyramids was measured as 245 nm in width and 184 nm in height, and the angle between the top GaN:Mg surface and the pyramid sidewall was calculated at about 56.3°. Due to the strain relief in the nano-disk MQW structure we induced an emission peak of photoluminescence at the tip of the inverted hexagonal pyramid which had a strong blue shift of 244 meV at 100 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 10, 26 March 2007, Pages 4492–4495
Journal: Thin Solid Films - Volume 515, Issue 10, 26 March 2007, Pages 4492–4495
نویسندگان
Chia-Feng Lin, Zhong-Jie Yang, Jing-Jie Dai, Jing-Hui Zheng, Shou-Yi Chang,