کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674471 | 1008964 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultra-thin charge selective systems based on MeSxHy (Me = In, Cu, Pb)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Ultra-thin MeSxHy (Me = In, Cu, Pb) heterojunctions were sandwiched between compact TiO2 and PEDOT:PSS layers. The MeSxHy layers were prepared by SILAR (successive ion layer adsorption and reaction). Intensity and temperature dependent current–voltage characteristics were investigated for small area solar cell structures. Highest values of open circuit voltage (0.9 V) were obtained for the In2S3/PbInxSyHz system annealed at moderate temperatures (150–200 °C) while PbInxSyHz did not act as an absorber. Largest values of short circuit current were reached for the In2S3/CuInxSyHz system in which both layers act as an absorber. The role of Pb and hydrosulfide for interface formation and defect passivation is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 20, 30 August 2008, Pages 7051–7054
Journal: Thin Solid Films - Volume 516, Issue 20, 30 August 2008, Pages 7051–7054
نویسندگان
S. Gavrilov, Th. Dittrich, B. Lim, A. Belaidi, M. Lux-Steiner,