کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674592 | 1008966 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn = P and As)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
LaZnOPn (Pn = P and As) thin films were successfully grown on MgO (001) substrates with an epitaxial relationship of (001) LaZnOPn || (001) MgO and [110] LaZnOPn || [110] MgO. The electrical conductivity of undoped LaZnOP epitaxial film was so low, 3.1 Ã 10â 6 S/cm at room temperature, that reliable Seebeck and Hall measurement results were not obtained. On the other hand, the electrical conductivities of the Cu-doped LaZnOP and undoped LaZnOAs epitaxial films were 2.7 Ã 10â 2 and 2.0 Ã 10â 1 S/cm at room temperature, respectively. The Seebeck coefficients of both the epitaxial films were positive, indicating p-type semiconductors. The optical bandgaps of LaZnOP and LaZnOAs were estimated to be â¼Â 1.7 eV and â¼Â 1.5 eV, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 17, 1 July 2008, Pages 5800-5804
Journal: Thin Solid Films - Volume 516, Issue 17, 1 July 2008, Pages 5800-5804
نویسندگان
Kentaro Kayanuma, Ryuto Kawamura, Hidenori Hiramatsu, Hiroshi Yanagi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono,