کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674595 | 1008966 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical properties of Al-doped ZnO–SnO2 thin films deposited by RF magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical and optical properties of Al-doped ZnO–SnO2 thin films deposited by RF magnetron sputtering Electrical and optical properties of Al-doped ZnO–SnO2 thin films deposited by RF magnetron sputtering](/preview/png/1674595.png)
چکیده انگلیسی
Aluminum-doped ZnO–SnO2 (ZTO) films were deposited by RF magnetron sputtering using a Zn2SnO4 target at 400 °C under Ar gas pressure of 2.0 Pa. The Al doping was carried out by placing Al sheets on the Zn2SnO4 target and the inclusion of Al was observed to increase to 5.3 at.%. The transmittance of Al-doped ZTO films decreased in the short wavelength region with increasing Al concentration. Al doping had no observable effect on the refractive index, but the electrical properties were remarkably affected. The conductivity exponentially decreased from 3.2 × 10 to 2.3 × 10− 4 S cm− 1 as the Al concentration increased from 0.0 to 5.3 at.%. The Hall mobility and free carrier density also decreased with increasing Al concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 17, 1 July 2008, Pages 5814–5817
Journal: Thin Solid Films - Volume 516, Issue 17, 1 July 2008, Pages 5814–5817
نویسندگان
Kazuo Satoh, Yoshiharu Kakehi, Akio Okamoto, Shuichi Murakami, Kousuke Moriwaki, Tsutom Yotsuya,