کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674651 | 1518091 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoinduced phenomena in nanostructured porous silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work we study the evolution of porous silicon photoluminescence under illumination. Samples were obtained by electrochemical etching of crystalline silicon wafers of different types. For the p-type samples the evolution of the spectra is explained in terms of photoinduced oxidation of nanostructures, which in turns leads to a discrete change in the photoluminescence spectra, as we reported in previous works. For the n-type material, a progressive decrease of the luminescence intensity is observed, which is attributed to the photoinduced generation of dangling bond related defect states at the surface layer surrounding the nanostructures. This model explains qualitatively well the kinetics of the evolution of the measured photoluminescence. Preliminary results of electronic paramagnetic resonance spectroscopy agree with this model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 510, Issues 1â2, 3 July 2006, Pages 169-174
Journal: Thin Solid Films - Volume 510, Issues 1â2, 3 July 2006, Pages 169-174
نویسندگان
R.D. Arce, R.R. Koropecki, G. Olmos, A.M. Gennaro, J.A. Schmidt,