کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674699 | 1008969 | 2007 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Low-temperature crystallization of sol–gel-derived lead zirconate titanate thin films using 2.45 GHz microwaves Low-temperature crystallization of sol–gel-derived lead zirconate titanate thin films using 2.45 GHz microwaves](/preview/png/1674699.png)
Lead zirconate titanate (PZT) thin films of thickness 420 nm were deposited on Pt/Ti/SiO2/Si substrate using a spin coating sol–gel precursor solution, and then annealed using 2.45 GHz microwaves at a temperature of 450 °C for 30 min. The film has a high perovskite content and high crystallinity with a full width at half maximum of 0.35°. The surface roughness of the PZT thin film was 1.63 nm. Well-saturated ferroelectric properties were obtained with a remanent polarization of 46.86 μC/cm2 and coercive field of 86.25 kV/cm. The film also exhibited excellent dielectric properties with a dielectric constant of 1140 and a dissipation factor of 0.03. These properties are superior to those obtained by conventional annealing at a temperature of 700 °C for 30 min.
Journal: Thin Solid Films - Volume 515, Issue 5, 22 January 2007, Pages 2891–2896