کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674832 | 1518118 | 2005 | 5 صفحه PDF | دانلود رایگان |
Indium sulfide (In2S3) thin films have been prepared by the spray pyrolysis (SP) technique using indium acetate and N-N dimethyl thiourea as precursor compounds. Samples prepared at different temperatures and atomic ratio of In to S in the starting solution, (In/S)sol, have been characterized using several techniques. X-ray diffraction studies have shown that the preparation temperature (Tp) affects the crystallinity of the deposited materials as well as the optoelectronic properties. For (In/S)sol=1/8, the optical band gap (Eg) increases from 2.2 up to 2.67 eV when Tp increases from 250 up to 450 °C. For (In/S)sol=1 and Tp=450 °C, the deposited material shows n-type electrical conductivity with a dark value of 1 (Ωcm)−1, and Eg=2.04 eV. The In2S3 thin films prepared under these conditions have a big potential use as a window material for photovoltaic heterojunction devices.
Journal: Thin Solid Films - Volumes 480–481, 1 June 2005, Pages 133–137