کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674880 1518118 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On correlation of CdS and CdSe valence band parameters
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
On correlation of CdS and CdSe valence band parameters
چکیده انگلیسی
In this paper, the authors present self-correlated analytical criteria for the components of effective mass tensor characterizing holes of three valence bands in wurtzite-structure crystals. These criteria were used to calculate all the effective mass components for CdS and CdSe. Detailed investigations revealing the influence of uniaxial strain on carrier effective masses and matrix elements describing interband transitions between the valence subbands and conductive band were carried out. It was shown that the carriers with transversal effective masses belonging to B-valence subband behave similar to the carriers with parallel effective masses of C-valence band and vise versa in both CdS and CdSe. The results obtained could be successfully used to improve the interpretation of experimental data on transport, optical, and luminescence phenomena in the materials investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volumes 480–481, 1 June 2005, Pages 373-376
نویسندگان
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