کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674942 | 1008972 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Piezoelectric properties of PZT films prepared by the sol–gel method and their application in MEMS
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Pb(Zr0.52Ti0.48)O3 (PZT) piezoelectric thin films with thickness of 0.7–2.2 μm were prepared on Pt/Ti-coated SiO2/Si (0.5 μm/300 μm) substrates by the sol–gel method. The piezoelectric coefficient e31 of the PZT thin film was − 12.5 ± 0.3 C/m2, which is evaluated by measuring the tip displacement of PZT-coated cantilevers of the dimensions 50 mm long, 4 mm wide, and 0.3 mm thick. The prepared PZT films demonstrated excellent piezoelectric properties and have large potential applications in MEMS devices. Micro-machined ultrasonic sensors, in which PZT-coated membrane functioned as sensing element, were fabricated and their properties were also characterized.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5309–5312
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5309–5312
نویسندگان
Sibei Xiong, Hiroshi Kawada, Hiroshi Yamanaka, Tomoaki Matsushima,