Electrical and structural properties of Ta–N thin film and Ta/Ta–N multilayer for embedded resistor

Ta/Ta–N multilayer has been developed to control temperature coefficient of resistance (TCR) in a thin-film embedded resistor with the incorporation of Ta layer (+ TCR) inserted into Ta–N layers (− TCR). Electrical and structural properties of sputtered Ta, Ta–N and the multilayer films were investigated. The stable resistivity value of 0.0065 Ω·cm in β-Ta film was obtained, and phase change from fcc-TaN to orthorhombic Ta3N5 in Ta–N films was observed at nitrogen partial pressure of 22%. The multilayer of Si/Ta(60 nm)/Ta3N5(104 nm)/Ta(60 nm)/Ta3N5(104 nm) showed TCR value of − 284 ppm/K, where TCR of Ta was − 183 ppm/K and that of Ta3N5 was − 3193 ppm/K.