کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674974 | 1008972 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of defects on the optical nonlinearity of thermally poled SiOx thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effect of defects on the optical nonlinearity of thermally poled SiOx thin films The effect of defects on the optical nonlinearity of thermally poled SiOx thin films](/preview/png/1674974.png)
چکیده انگلیسی
Defects were deliberately induced in SiOx thin films during their deposition using a helicon plasma activated reactive evaporation technique. The films were thermally poled and the poling induced second-order optical nonlinearity was investigated by measuring the second harmonic generation of the samples. It was found that oxygen-rich SiOx thin films containing mainly peroxy radicals enabled a much larger optical nonlinearity than stoichiometric SiO2 films after poling, and their optical nonlinearity was long-time stable; while silicon-rich SiOx thin films containing mainly oxygen vacancy defects presented a smaller and unstable optical nonlinearity after poling.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5474–5477
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5474–5477
نویسندگان
W.T. Li, R. Boswell, M. Samoc, A. Samoc, R.P. Wang,