کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674982 1008972 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystallization kinetics of Ga–Sb–Te films for phase change memory
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Crystallization kinetics of Ga–Sb–Te films for phase change memory
چکیده انگلیسی

Ga–Sb–Te ternary thin films were prepared by co-sputtering using targets GaSb and Sb8Te2. Crystallization processes of these films were studied by measuring the temperature-dependent electrical resistance during non-isothermal heating. The activation energy (Ea), rate factor (Ko), and kinetics exponent (n) were deduced from Kissinger and Ozawa's plots, respectively. The crystallization temperatures (Tx = 108∼319°C) increase with increasing GaSb contents. The activation energy (1.82∼7.52 eV) increases with increasing Ga content until 31.6 at.% then it decreases. The crystallization mechanisms of compositions A∼D (Ga17∼32Sb71∼62Te12∼6), as evidenced from n values, are nuclei formation and subsequent crystal growth; the nucleation rate decreases with grain growth. While composition E (Ga38.2Sb57.7Te4.1) reveals an n value lower than 1.5, it implies the one-dimensional crystal growth from the nuclei. The crystallization time of each composition was evaluated using JMA equation using all derived kinetics parameters. Composition C (Ga26.4Sb65.2Te8.4), showing the shortest crystallization time, is suggested for phase change RAM applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 16, 30 June 2008, Pages 5513–5517
نویسندگان
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