کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675176 | 1008975 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient](/preview/png/1675176.png)
چکیده انگلیسی
ZnO films with improved crystallinity were grown on a Si (111) substrate by a two-step growth process using low-temperature ZnO buffer layers. The effect of the ambient gas during the temperature elevation and the in-situ thermal annealing after the growth of the low-temperature buffer layers on the optical and structural properties of the films was investigated by X-ray diffraction (XRD), photoluminescence, and transmission electron microscopy. The use of argon as the ambient gas during the thermal treatment of the buffer layer leads to the enhancement of the (0002) diffraction peak intensity at 2θ â¼Â 34.4° and the reduction of the full width at half maximum value in the XRD rocking curve, which means that well-defined and c-axis oriented ZnO film was obtained. The relationship between the thickness of the SiO2 layer between the ZnO buffer layers and Si substrates and the structural and optical properties of the ZnO films is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 17, 13 June 2007, Pages 6721-6725
Journal: Thin Solid Films - Volume 515, Issue 17, 13 June 2007, Pages 6721-6725
نویسندگان
Dong Jun Park, Jeong Yong Lee, Tae Eun Park, Young Yi Kim, Hyung Koun Cho,