کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675180 | 1008975 | 2007 | 5 صفحه PDF | دانلود رایگان |
Co-doped SnO2 thin films are grown on sapphire (0001) substrates at 600 °C by the technique of dual-beam pulsed laser deposition. The prepared films show preferred orientation in the [100] direction of the rutile structure of SnO2. Nonequilibrium film growth process results in doping Co into SnO2 much above the thermal equilibrium limit. A Film with 3% of Co is ferromagnetic at room temperature with a remanent magnetization of ∼ 26% and a coercivity of ∼ 9.0 mT. As Co doping content x increases, the optical band gap absorption edge (E0) of the Co-doped SnO2 thin films initially shows a redshift at low x up to x = 0.12 and then increases at the higher x, which are attributed to the sp–d exchange interactions and alloying effects, respectively.
Journal: Thin Solid Films - Volume 515, Issue 17, 13 June 2007, Pages 6744–6748