کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675181 | 1008975 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Depth redistribution of components of SiOx layers prepared by magnetron sputtering in the process of their decomposition
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The process of thermal decomposition of SiOx layers prepared by magnetron co-sputtering of Si and SiO2 on Si and quartz substrates is studied by Auger and secondary ion mass spectroscopies. It is found that high temperature annealing of the layers causes a Si-depleted region near the layer/substrate interface. It is shown that the formation of this region does not depend on the type of substrate but depends on the content of excess Si and is observed at high content of excess Si. When the excess Si content decreases, the Si-depleted region at first smears and then disappears. The mechanism of SiOx decomposition and possible reasons for the appearance of the Si-depleted region are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 17, 13 June 2007, Pages 6749–6753
Journal: Thin Solid Films - Volume 515, Issue 17, 13 June 2007, Pages 6749–6753
نویسندگان
L. Khomenkova, N. Korsunska, T. Stara, Ye. Venger, C. Sada, E. Trave, Y. Goldstein, J. Jedrzejewski, E. Savir,