کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675339 | 1518096 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A method for reducing surface roughness during the thermal desorption of silicon
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A method for reducing surface roughness during the thermal desorption of silicon A method for reducing surface roughness during the thermal desorption of silicon](/preview/png/1675339.png)
چکیده انگلیسی
An in situ method for inhibiting surface roughening during the thermal removal of the silicon native oxide layer is explored and developed. The method entails depositing a thin sacrificial silicon film at low temperature directly exterior to the native oxide, following which the sample is heated such that the native oxide preferentially reacts with the sacrificial film reducing wafer etching. The results indicate a significant improvement in surface smoothness, from an RMS roughness of 2.70 to 0.84 nm, while leaving an exposed surface which has been demonstrated to be suitable for epitaxial growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 136–139
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 136–139
نویسندگان
A.F. Pun, X. Wang, S.M. Durbin, J.P. Zheng,