کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675346 | 1518096 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Pad conditioning temperature effects were investigated on the improvement of silicon dioxide chemical mechanical polishing (oxide-CMP) performances. The characteristics of silica slurry including pH and particle size were changed by the process temperature of the frictional heat in a polishing process and the environmental temperature of the remaining heat after a high-temperature conditioning process. These changed properties caused the slurry to make an oxide surface to be easily removed in the hydro-carbonated state. The slurry residues in pores and grooves of polishing pad were also clearly removed by the high-temperature conditioning process, which aided the slurry to attack the oxide surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 166–169
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 166–169
نویسندگان
Nam-Hoon Kim, Pil-Ju Ko, Gwon-Woo Choi, Yong-Jin Seo, Woo-Sun Lee,