کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675346 1518096 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning
چکیده انگلیسی

Pad conditioning temperature effects were investigated on the improvement of silicon dioxide chemical mechanical polishing (oxide-CMP) performances. The characteristics of silica slurry including pH and particle size were changed by the process temperature of the frictional heat in a polishing process and the environmental temperature of the remaining heat after a high-temperature conditioning process. These changed properties caused the slurry to make an oxide surface to be easily removed in the hydro-carbonated state. The slurry residues in pores and grooves of polishing pad were also clearly removed by the high-temperature conditioning process, which aided the slurry to attack the oxide surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1–2, 10 May 2006, Pages 166–169
نویسندگان
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