Characterization of copper chemical mechanical polishing (CMP) in nitric acid–hydrazine based slurry for microelectronic fabrication

Chemical mechanical polishing of copper in nitric acid based slurry, with hydrazine as inhibitor was investigated. The polish rate and static etch rate decreased with the addition of hydrazine. Electrochemical corrosion studies confirm the inhibiting effect of hydrazine. The roughness of the polished copper surface improved with the addition of hydrazine.