کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675440 1008979 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural evolution of boron nitride films grown on diamond buffer-layers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Structural evolution of boron nitride films grown on diamond buffer-layers
چکیده انگلیسی

Boron nitride films on diamond buffer layers of varying grain size, surface roughness and crystallinity are deposited by the reaction of B2H6 and NH3 in a mixture of H2 and Ar via microwave plasma-assisted chemical vapor deposition. Various forms of boron nitride, including amorphous α-BN, hexagonal h-BN, turbostratic t-BN, rhombohedral r-BN, explosion E-BN, wurzitic w-BN and cubic c-BN, are detected in the BN films grown on different diamond buffer layers at varying distances from the interface of diamond and BN layers. The c-BN content in the BN films is inversely proportional to the surface roughness of the diamond buffer layers. Cubic boron nitride can directly grow on smooth nanocrystalline diamond films, while precursor layers consisting of various sp2-bonded BN phases are formed prior to the growth of c-BN film on rough microcrystalline diamond films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 3, 23 November 2006, Pages 973–978
نویسندگان
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