کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675461 | 1008979 | 2006 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: SIMS studies of low-K materials SIMS studies of low-K materials](/preview/png/1675461.png)
We report progress in conducting quantitative SIMS analyses of low-K materials. Electron-beam (e-beam) pre-irradiation of SIMS measurement sites was used to study the e-beam-induced effects on SIMS depth profiling of a porous organosilicate low-K material. Pre-irradiation of the sample surface using the e-beam causes a reduction in the thickness of the low-K film. SIMS profiling was used to sputter to identifiable marker positions within the pre-irradiated film. Physical measurement of the thickness of the remaining film was used to show that the e-beam-induced reduction in thickness occurs uniformly throughout the pre-irradiated film. Exposure of the film to the e-beam prior to SIMS analysis also resulted in minor changes in the composition of the film. However, pre-irradiation of the film is not part of the normal SIMS measurement procedure. We conclude that when the e-beam irradiation is used only for charge compensation during SIMS depth profiling, the SIMS analysis of the low-K material will not be significantly affected.
Journal: Thin Solid Films - Volume 515, Issue 3, 23 November 2006, Pages 1087–1092