کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675483 1008979 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of the growth of concomitant nitride layers produced by a post-discharge assisted process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Analysis of the growth of concomitant nitride layers produced by a post-discharge assisted process
چکیده انگلیسی

In the present work, the growth of concomitant nitride layers during a post-discharge process is studied. The analysis takes into account the similarities and differences between nitriding post-discharge processes and other nitriding processes, employing a mathematical simulation of nitrogen diffusion.The considered differences are related to the thermodynamic standard states, the nitrogen concentration on the surface and the sputtering of the surface (this one for plasma processes). Nitrogen diffusion and layer formation are described from the beginning of the process by means of a mathematical model.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 3, 23 November 2006, Pages 1197–1202
نویسندگان
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