کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675532 1008980 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxial growth and relaxation of γ-Al2O3 on silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Epitaxial growth and relaxation of γ-Al2O3 on silicon
چکیده انگلیسی

0.5–10 nm-thick single crystal γ-Al2O3 films was epitaxially grown, at high temperature, on Si(001) and Si(111) substrates using electron-beam evaporation techniques. Reflection High Energy Electron Diffraction studies showed that the Al2O3 films grow pseudomorphically on Si (100) up to thickness of 2 nm. For higher thicknesses, a cubic to hexagonal surface phase transition occurs. Epitaxial growth and relaxation were also observed for Si(111). The film surfaces are smooth and the oxide–Si interfaces are atomically abrupt without interfacial layers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 16, 4 June 2007, Pages 6479–6483
نویسندگان
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