کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675588 1008982 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
چکیده انگلیسی

We report on the growth of thin, n-type, 4H-SiC epilayers on (0001) 4H-SiC substrates with uniform doping depth profile. The initial etching of the material before growth is studied to avoid affecting the starting material in the case of regrowth. Variation of the growth rate and its effect on nitrogen incorporation during the first few minutes of the growth have been studied using delta doped demarcation layers. Different growth conditions at the beginning of the growth have been tested in order to grow abrupt layers with a flat doping profile with a variation < ± 1%.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 2, 25 October 2006, Pages 460–463
نویسندگان
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