Adjustable hydrogen atom incorporation into sputter deposited a-SiC

Thin films of a-Si0.8C0.2:H are deposited by ion beam sputtering combined with the simultaneous irradiation of hydrogen atoms delivered by a thermal hydrogen atom source. Elemental composition and bonding structure of the films are analysed by XPS, RBS, ERD, and FTIR. The hydrogen concentration can be varied in a controlled manner. Up to concentrations of 5%, the hydrogen is exclusively incorporated in single Si-H bonds.