کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675608 | 1008982 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface morphology of ErP layers on InP and Ga0.52In0.48P
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface morphology of ErP layers on InP and Ga0.52In0.48P Surface morphology of ErP layers on InP and Ga0.52In0.48P](/preview/png/1675608.png)
چکیده انگلیسی
We have grown ErP on Ga0.52In0.48P (001) lattice-matched to GaAs and on InP (001) by low-pressure organometallic vapor phase epitaxy and investigated the surface morphology of ErP layers. Lattice-mismatch in ErP/Ga0.52In0.48P/GaAs heterostructures (Îa / a = â 0.8%) is much less than that of ErP/InP heterostructures (â 4.5%). Extended X-ray absorption fine structure measurement revealed that Er exists in the form of ErP rock-salt structure in both samples. The estimated growth rate of ErP on Ga0.52In0.48P is 1.8 ML/h. Our results demonstrate that ErP on Ga0.52In0.48P has smaller surface roughness than ErP on InP. Moreover, an ErP layer exists underneath the surface about 2 ML and the surface roughness does not depend on the ErP thickness in the range of our experiments (2.2-13.7 ML).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 2, 25 October 2006, Pages 543-546
Journal: Thin Solid Films - Volume 515, Issue 2, 25 October 2006, Pages 543-546
نویسندگان
Atsushi Koizumi, Hiroyuki Ohnishi, Tomohiro Inoue, Takeshi Yamauchi, Ichirou Yamakawa, Hironori Ofuchi, Masao Tabuchi, Arao Nakamura, Yoshikazu Takeda,