کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675660 1008982 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of Ge islands on Si substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Growth of Ge islands on Si substrates
چکیده انگلیسی
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM). Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650 °C. At this temperature, islands grow in conical shape with very similar dimensions; however, inter-island distances varied significantly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 2, 25 October 2006, Pages 752-755
نویسندگان
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