کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675678 1518103 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films
چکیده انگلیسی

The physical, optical, and mechanical properties of silicon carbonitride (Si:C:N) films produced by the remote nitrogen plasma chemical vapor deposition (RP-CVD) from tetramethyldisilazane have been investigated in relation to their chemical composition and structure. The films deposited at different substrate temperature (30–400 °C) were characterized in terms of their density, refractive index, hardness, elastic modulus, and friction coefficient. The correlations between the film compositional parameters, expressed by the atomic concentration ratios N / Si, C / Si, and N / C, as well as structural parameters described by the relative integrated intensities of the infrared absorption bands from the Si–N, Si–C, and SiMe units (controlled by substrate temperature) were investigated. On the basis of the results of these studies, reasonable structure–property relationships have been determined.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 497, Issues 1–2, 21 February 2006, Pages 35–41
نویسندگان
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