کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675711 | 1518103 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, optical and electrical properties of transparent V and Pd-doped TiO2 thin films prepared by sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin films of TiO2 doped with vanadium and palladium were prepared by the magnetron sputtering method. Important information about microstructure and band gap modification due to dopant incorporation in the TiO2 host lattice was provided by X-ray diffraction, optical transmission and electrical examinations. Three different phases were found in the thin film: (Ti,V)O2–solid solution, PdO and metallic inclusions of Pd. A band gap of (Ti,V)O2 of about 2.09 eV and an additional energy level of about 1.57 eV below conduction band was found from the absorption spectra. Negative sign of Seebeck coefficient indicates electronic conduction of the semiconducting Ti, V, Pd oxide composite.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 497, Issues 1–2, 21 February 2006, Pages 243–248
Journal: Thin Solid Films - Volume 497, Issues 1–2, 21 February 2006, Pages 243–248
نویسندگان
J. Domaradzki,