کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675827 1008985 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nucleation of CdTe thin films deposited by close-space sublimation under a nitrogen ambient
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Nucleation of CdTe thin films deposited by close-space sublimation under a nitrogen ambient
چکیده انگلیسی
The early stages of the close-space sublimation growth of CdTe/ITO (indium tin oxide) at 500°C under 26.7 kPa (200 Torr) of N2 were investigated, the relatively high pressure being used to slow the growth. Film development was monitored over 60 mins by ex-situ AFM (atomic force microscopy), the growth being controlled by a shutter. The films formed by the 'island' or Volmer-Weber growth mechanism. Developments in the areal island growth rate, the island density and spatial distribution type were explained using growth mechanisms. Significant changes in these phenomena at t ≥ 10 mins were attributed to a change in growth mechanism from surface migration limited, to a regime in which island coalescence and direct impingement of vapour species on the islands became important. Since the islands are characterised by distinct crystalline facets, this indicates the growth mechanism to be uninterrupted step-flow like addition of material to each island. Arguments are given to relate the final grain size in the films to the density of nuclei that are stable to re-evaporation after t = 10 mins.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 15, 31 May 2007, Pages 5828-5832
نویسندگان
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