کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675925 | 1518088 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thin films of the tetragonal rutile-type SnO2 phase have been deposited by both atomic layer deposition (ALD) and chemical vapour deposition (CVD) using the SnI4–O2 precursor combination. Depositions were carried out in the temperature region of 350–750 °C on α-Al2O3(0 1 2) substrates. In both cases the films were found to grow epitaxially with the in-plane orientation relationships [0 1 0]SnO2 || [1 0 0]α-Al2O3 and [1 0 1¯]SnO2 || [1¯ 2¯ 1]α-Al2O3. Films grown by ALD were found to be close to perfectly single crystalline, contained a low density of defects and were almost atomically smooth. The CVD films were found to have a much rougher film morphology, and exhibited both grain boundaries and twin formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 514, Issues 1–2, 30 August 2006, Pages 63–68
Journal: Thin Solid Films - Volume 514, Issues 1–2, 30 August 2006, Pages 63–68
نویسندگان
Jonas Sundqvist, Jun Lu, Mikael Ottosson, Anders Hårsta,