کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675944 | 1518088 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etch rate and surface morphology of polycrystalline β-silicon carbide using chlorine trifluoride gas
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Etch rates of polycrystalline β-silicon carbide (SiC) substrate in a wide range from less than one to more than 10 μm/min are obtained using chlorine trifluoride gas in ambient nitrogen at 673-973 K and atmospheric pressure in a horizontal reactor. Over the chlorine trifluoride gas concentrations of 10-100% used in this study, the etch rate increases at the substrate temperatures between 673 and 773 K. Additionally, the etch rate at temperatures higher than 773 K is independent of the substrate temperature, similar to the one obtained using chlorine trifluoride gas concentration of 100%. The root means square roughness of etched surface tends to be small at high temperatures and high chlorine trifluoride gas concentrations. The polycrystalline β-SiC etch rate can be adjusted using a combination of gas flow rate, chlorine trifluoride gas concentration, and substrate temperature in order to obtain surfaces suitable for various purposes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 514, Issues 1â2, 30 August 2006, Pages 193-197
Journal: Thin Solid Films - Volume 514, Issues 1â2, 30 August 2006, Pages 193-197
نویسندگان
Hitoshi Habuka, Satoko Oda, Yasushi Fukai, Katsuya Fukae, Takashi Takeuchi, Masahiko Aihara,