کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1675954 1518088 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of the direct allowed transitions band gap and optical constants of polycrystalline α-In2Se3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Temperature dependence of the direct allowed transitions band gap and optical constants of polycrystalline α-In2Se3 thin films
چکیده انگلیسی

Polycrystalline α-In2Se3 thin films were obtained by the thermal evaporation of α-In2Se3 crystals onto glass substrates kept at temperature of 200 °C. The temperature dependence of the optical band gap in the temperature region of 300–480 K and the room temperature refractive index, n(λ), of these films have been investigated. The absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to a direct allowed transitions energy gap that exhibits a temperature coefficient of − 8.51 × 10− 4 (eV/K). The room temperature n(λ) which was calculated from the transmittance data allowed the identification of the oscillator strength and energy, static dielectric constant and static refractive index as 20.7 and 2.15 eV, 10.70 and 3.26, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 514, Issues 1–2, 30 August 2006, Pages 267–271
نویسندگان
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