کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675961 | 1518088 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of total gas velocity on the growth of ZnO films by metal-organic chemical vapor deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO films were grown on Si (100) substrates at low pressure in a vertical metal-organic chemical vapor deposition reactor with different total gas velocity. The structure and photoluminescence property of the undoped ZnO films grown with different flow rates of N2 eluting gas were investigated. The structure quality was improved as the N2 flow rate increased. In addition, when the flow rate of N2 eluting gas was higher than 1.4Â slm, a new luminescence peak which was attributed to the N-related defect was detected at room temperature, besides the other two peaks near the band gap, which were due to radiation of the free exciton and the electron from the donor level to the valence band respectively, also appeared at low flow rate of N2 eluting gas.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 514, Issues 1â2, 30 August 2006, Pages 306-309
Journal: Thin Solid Films - Volume 514, Issues 1â2, 30 August 2006, Pages 306-309
نویسندگان
Junjie Zhu, Ran Yao, Cihui Liu, In-Hwan Lee, Lala Zhu, Jin-woo Ju, Jong Hyeob Baek, Bixia Lin, Zhuxi Fu,