کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676001 | 1518089 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of electrical stability of polycrystalline ZnO thin films via intentional post-deposition hydrogen doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigate the hydrogen doping effect on polycrystalline ZnO thin films prepared by the photoassisted metalorganic chemical vapor deposition technique. In situ post-deposition hydrogen doping was performed using mercury-sensitized photodecomposition of hydrogen gas. From Fourier transform infrared spectra, we observe small changes in O-H bond-stretching local vibrational modes as a result of hydrogen doping. The photoluminescence measurements reveal that intentional hydrogen doping significantly suppresses nonradiative recombination centers in the ZnO films. The undoped ZnO film reveals a heavily n-type as-grown conductivity due to the high hydrogen content, but it is unstable in a humid air atmosphere. However, the electrical stability is significantly improved as a result of hydrogen doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 513, Issues 1â2, 14 August 2006, Pages 148-151
Journal: Thin Solid Films - Volume 513, Issues 1â2, 14 August 2006, Pages 148-151
نویسندگان
Seung Yeop Myong, Sang Il Park, Koeng Su Lim,