Bi-stable pore size during electrochemical etching of n-type silicon during a thermal ramp

We have investigated the change in size and density of pores during electrochemical etching of n-type (5 Ωcm) silicon under backside illumination and subjected to a thermal ramp. The pore structure was allowed to self organize, and for the parameters reported here this results in macropores with diameters in the ∼ μm order of magnitude range. As the etching progressed under constant current conditions, the electrolyte and the sample heated slowly up in the temperature range 20-60 °C. The resulting pore structure was obtained by scanning electron microscope examination of cross sections of cleaved samples. The temperature ramp caused the pore diameters and pore densities to change abruptly rather than continuously. The change can thus phenomenologically be described as a transition between two stable pore size configurations; bi-stable switching or phase transition. This phenomenon is observed for a range of parameters yielding macropores: current densities between 2-20 mA/cm2 and varying light intensity. The transition is between known configurations.